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ZXMN6A08K
Electrical Characteristics @T A = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
BV DSS
I DSS
I GSS
60
?
?
?
?
?
?
0.5
± 100
V
μ A
nA
I D = 250 μ A, V GS = 0V
V DS = 60V, V GS = 0V
V GS = ± 20V, V DS = 0V
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-Resistance (Note 7)
Forward Transconductance (Notes 7 & 8)
Diode Forward Voltage (Note 7)
Reverse recovery time (Note 8)
Reverse recovery charge (Note 8)
V GS(th)
R DS (ON)
g fs
V SD
t rr
Q rr
1.0
?
?
?
?
?
?
6.6
0.88
19.2
30.3
3.0
0.080
0.150
?
0.95
?
?
V
?
S
V
ns
nC
I D = 250 μ A, V DS = V GS
V GS = 10V, I D = 4.8A
V GS = 4.5V, I D = 4.2A
V DS = 15V, I D = 4.8A
I S = 4.0A, V GS = 0V
I S = 1.4A, di/dt= 100A/ μ s
DYNAMIC CHARACTERISTICS ( Note 8 )
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Total Gate Charge
C iss
C oss
C rss
Q g
Q g
?
?
?
?
?
459
44.2
24.1
3.8
5.8
?
?
?
?
?
pF
pF
pF
nC
nC
V DS = 40V, V GS = 0V
f= 1MHz
V GS = 4.5V
V DS = 30V
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time (Note 9)
Q gs
Q gd
t D(on)
?
?
?
1.4
1.9
2.6
?
?
?
nC
nC
ns
V GS = 10V
I D = 1.4A
Turn-On Rise Time (Note 9)
Turn-Off Delay Time (Note 9)
Turn-Off Fall Time (Note 9)
t r
t D(off)
t f
?
?
?
2.1
12.3
4.6
?
?
?
ns
ns
ns
V DD = 30V, V GS = 10V
I D = 1.5A, R G ? 6.0 Ω
Notes:
7. Measured under pulsed conditions. Pulse width ≤ 300 μ s; duty cycle ≤ 2%
8. For design aid only, not subject to production testing.
9. Switching characteristics are independent of operating junction temperatures.
ZXMN6A08K
Document Revision: 2
4 of 8
www.diodes.com
July 2009
? Diodes Incorporated
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